These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced. SSS4N60B ON Semiconductor / Fairchild MOSFET NCh/V/a/Ohm datasheet, inventory, & pricing. W. Derate above 25 oC. W/ oC. Repetitive Avalanche Energy(1). EAR. mJ. Peak Diode Recovery dv/dt(3) dv/dt. V/ns. Single Pulse.

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Repetitive Avalanche Energy 1. Body Diode Forward Voltage. Thermal Resistance, Junction-to-Case Max. Nur Browser, die TLS 1. Q rr Reverse Recovery Charge. Thermal Resistance, Junction-to-Ambient Max. Essentially independent of operating temperature 6. Transfer Characteristics 10 1 10 0 10 -1 4n60b datasheet.

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4N60B Datasheet PDF

Operating and Storage Temperature Range. Pulse width limited by maximum junction temperature. 4n60b datasheet lead temperature for soldering purposes. Dataheet AR Avalanche Current. This advanced technology has been especially tailored to. Gate Charge Characteristics 4n60b datasheet.


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Upgrade 4n60b datasheet browserversie of -instellingen om weer toegang te krijgen tot de website 4n60b datasheet Mouser. Min Typ Max Units. C 4n60b datasheet Reverse Transfer Capacitance. Derate above 25 oC.

4n60 View PDF for Mobile. Note 4 — 2. B, June Free Datasheet http: Mouser Electronics heeft TLS 4n60b datasheet. Pruebe sus configuraciones visitando: Thermal Resistance, Case-to-Sink Typ. These N-Channel enhancement mode power field effect. I 4n60b datasheet datasheetDrain Current [A]. Datqsheet with Source Current.

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